Fabrikantnummer

STMicroelectronics SCTW N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA60N120G2-4

RS-stocknr.:: 230-0093
Fabrikantnummer:: SCTWA60N120G2-4
Fabrikant:: STMicroelectronics

STMicroelectronics SCTW N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA60N120G2-4

Momenteel niet beschikbaar

We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.

RS-stocknr.:: 230-0093
Fabrikantnummer:: SCTWA60N120G2-4
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	1.2kV
	Package Type	Hip-247
	Series	SCTW
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	52mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	388W
	Forward Voltage Vf	3V
	Maximum Gate Source Voltage Vgs	22V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	5.1mm
	Height	21.1mm
	Length	15.9mm
	Automotive Standard	No

	Alles selecteren
	Merk STMicroelectronics
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 1.2kV
	Package Type Hip-247
	Series SCTW
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 52mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 388W
	Forward Voltage Vf 3V
	Maximum Gate Source Voltage Vgs 22V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 5.1mm
	Height 21.1mm
	Length 15.9mm
	Automotive Standard No

Datasheet - SCTWA60N120G2-4

The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

Gerelateerde Links

Wees als eerste op de hoogte van onze nieuwste producten en aanbiedingen

E-mailadres

De persoonlijke gegevens die u aan ons verstrekt bij het aanmelden voor deze mailinglijst worden verwerkt in overeenstemming met ons privacybeleid.