DiodesZetex DMN3028LQ Type N-Channel MOSFET, 6.2 A, 30 V Enhancement, 3-Pin SOT-23 DMN3028LQ-7
- RS-stocknr.:
- 213-9174
- Fabrikantnummer:
- DMN3028LQ-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 20,70
(excl. BTW)
€ 25,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 18.050 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,414 | € 20,70 |
| 100 - 200 | € 0,362 | € 18,10 |
| 250 - 450 | € 0,355 | € 17,75 |
| 500 - 950 | € 0,322 | € 16,10 |
| 1000 + | € 0,29 | € 14,50 |
*prijsindicatie
- RS-stocknr.:
- 213-9174
- Fabrikantnummer:
- DMN3028LQ-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN3028LQ | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1.1mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN3028LQ | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1.1mm | ||
Length 3mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex DMN3028LQ series MOSFET is designed to meet the stringent requirements of automotive applications.
Fast switching speed
Low input/output leakage
ESD protected gate
Gerelateerde Links
- DiodesZetex DMN3028LQ Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23