Infineon OptiMOS 5 Type N-Channel MOSFET, 62 A, 100 V N, 8-Pin PQFN BSZ096N10LS5ATMA1
- RS-stocknr.:
- 214-4343
- Fabrikantnummer:
- BSZ096N10LS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 12,36
(excl. BTW)
€ 14,96
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 9.020 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,236 | € 12,36 |
| 50 - 90 | € 1,174 | € 11,74 |
| 100 - 240 | € 1,124 | € 11,24 |
| 250 - 490 | € 1,075 | € 10,75 |
| 500 + | € 1,00 | € 10,00 |
*prijsindicatie
- RS-stocknr.:
- 214-4343
- Fabrikantnummer:
- BSZ096N10LS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Height | 1.1mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Height 1.1mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
It is ideal for hot-swap and e-fuse applications
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