Infineon OptiMOS 5 Type N-Channel MOSFET, 40 A, 80 V N, 8-Pin PQFN BSZ110N08NS5ATMA1
- RS-stocknr.:
- 214-4345
- Fabrikantnummer:
- BSZ110N08NS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 17,68
(excl. BTW)
€ 21,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 13.700 stuk(s) vanaf 19 januari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,884 | € 17,68 |
| 100 - 180 | € 0,84 | € 16,80 |
| 200 - 480 | € 0,804 | € 16,08 |
| 500 - 980 | € 0,769 | € 15,38 |
| 1000 + | € 0,716 | € 14,32 |
*prijsindicatie
- RS-stocknr.:
- 214-4345
- Fabrikantnummer:
- BSZ110N08NS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1.1mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
The 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
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