Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 11 A, 800 V N, 3-Pin TO-220 IPA80R450P7XKSA1
- RS-stocknr.:
- 214-4357
- Fabrikantnummer:
- IPA80R450P7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 16,49
(excl. BTW)
€ 19,95
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 630 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 1,649 | € 16,49 |
| 50 - 90 | € 1,567 | € 15,67 |
| 100 - 240 | € 1,50 | € 15,00 |
| 250 - 490 | € 1,435 | € 14,35 |
| 500 + | € 1,335 | € 13,35 |
*prijsindicatie
- RS-stocknr.:
- 214-4357
- Fabrikantnummer:
- IPA80R450P7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Power Dissipation Pd | 29W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.68mm | |
| Standards/Approvals | No | |
| Width | 16.15 mm | |
| Height | 4.85mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Power Dissipation Pd 29W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 10.68mm | ||
Standards/Approvals No | ||
Width 16.15 mm | ||
Height 4.85mm | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
It has fully optimised portfolio
It has lower assembly cost
Gerelateerde Links
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPA80R450P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPAN80R450P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPA80R900P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPA80R600P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPA80R360P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 FP IPA80R750P7XKSA1
- Infineon CoolMOS™ P7 N-Channel MOSFET 800 V, 3-Pin TO-220 IPP80R450P7XKSA1
- Infineon CoolMOS™ C3 N-Channel MOSFET 800 V, 3-Pin TO-220 FP SPA11N80C3XKSA1