Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 4.5 A, 800 V, 3-Pin TO-220
- RS-stocknr.:
- 218-3072
- Fabrikantnummer:
- IPP80R1K2P7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 25,00
(excl. BTW)
€ 30,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 250 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,50 | € 25,00 |
| 100 - 200 | € 0,486 | € 24,30 |
| 250 - 450 | € 0,474 | € 23,70 |
| 500 - 950 | € 0,462 | € 23,10 |
| 1000 + | € 0,45 | € 22,50 |
*prijsindicatie
- RS-stocknr.:
- 218-3072
- Fabrikantnummer:
- IPP80R1K2P7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | 800V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 37W | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.45mm | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series 800V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 37W | ||
Maximum Operating Temperature 150°C | ||
Height 9.45mm | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS™ P7 series N-channel power MOSFET. The 800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
Best-in-class DPAK RDS(on)
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
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