Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 10 A, 700 V N, 3-Pin TO-220 IPAN70R450P7SXKSA1
- RS-stocknr.:
- 214-4359
- Fabrikantnummer:
- IPAN70R450P7SXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 13,305
(excl. BTW)
€ 16,095
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 285 stuk(s) vanaf 10 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 0,887 | € 13,31 |
| 75 - 135 | € 0,843 | € 12,65 |
| 150 - 360 | € 0,807 | € 12,11 |
| 375 - 735 | € 0,772 | € 11,58 |
| 750 + | € 0,719 | € 10,79 |
*prijsindicatie
- RS-stocknr.:
- 214-4359
- Fabrikantnummer:
- IPAN70R450P7SXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | 700V CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 13.1nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 22.7W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.85mm | |
| Width | 16.15 mm | |
| Length | 10.68mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series 700V CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 13.1nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 22.7W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 4.85mm | ||
Width 16.15 mm | ||
Length 10.68mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The 700V Cool MOS P7 super junction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains.
It supports less magnetic size with lower BOM costs
It has high ESD ruggedness
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- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon 700V CoolMOS P7 Type N-Channel MOSFET 700 V P, 3-Pin TO-220 IPA70R450P7SXKSA1
