Infineon 800V CoolMOS P7 Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R1K4P7ATMA1
- RS-stocknr.:
- 214-4402
- Fabrikantnummer:
- IPN80R1K4P7ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 20 eenheden)*
€ 12,78
(excl. BTW)
€ 15,46
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 2.140 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 + | € 0,639 | € 12,78 |
*prijsindicatie
- RS-stocknr.:
- 214-4402
- Fabrikantnummer:
- IPN80R1K4P7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | 800V CoolMOS P7 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 7W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series 800V CoolMOS P7 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 7W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.
It has fully optimised portfolio
It has lower assembly cost
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