Infineon CoolMOS P7 N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R4K5P7ATMA1

RS-stocknr.:: 219-5997
Fabrikantnummer:: IPN80R4K5P7ATMA1
Fabrikant:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 1.5 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R4K5P7ATMA1

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RS-stocknr.:: 219-5997
Fabrikantnummer:: IPN80R4K5P7ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	800V
	Package Type	SOT-223
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	900mV
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	6W
	Typical Gate Charge Qg @ Vgs	4nC
	Maximum Operating Temperature	150°C
	Length	6.7mm
	Width	3.7mm
	Standards/Approvals	No
	Height	1.8mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 800V
	Package Type SOT-223
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 900mV
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 6W
	Typical Gate Charge Qg @ Vgs 4nC
	Maximum Operating Temperature 150°C
	Length 6.7mm
	Width 3.7mm
	Standards/Approvals No
	Height 1.8mm
	Automotive Standard No

Datasheet - IPN80R4K5P7ATMA1

Infineon CoolMOS P7 Series MOSFET, 800V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - IPN80R4K5P7ATMA1

This MOSFET is a high-voltage switching transistor designed for surface-mount power conversion and control tasks. It operates reliably across a wide ambient range and is intended for use where robust voltage blocking and moderate continuous current capability are required.

Features and Benefits:

• 800V drain-source rating enables high-voltage applications
• 450mΩ RDS(on) limits conduction losses during switching
• 4nC typical gate charge reduces drive energy requirements
• 1.5A continuous drain current supports steady-state loads
• 6W maximum power dissipation manages thermal stress during operation
• ±20V gate tolerance allows standard gate‑drive voltages

Applications

• Suitable for offline power supplies handling high voltages
• Ideal for boost converters in industrial systems
• Used for switch‑mode power stages with moderate currents
• Can be used for semiconductor testing fixtures requiring 800V
• Used with surface‑mount assemblies on Compact power boards

What ambient temperatures can it operate within?

It functions across a wide temperature span from −55°C to 150°C, providing suitability for severe thermal environments.

How does the package influence thermal performance?

The SOT‑223 surface‑mount package offers a small footprint while enabling heat dissipation compatible with a 6W maximum power dissipation when appropriately mounted.

What gate‑drive considerations are required?

The device accepts up to ±20V between gate and source and typically needs drive energy corresponding to a 4nC total gate charge for Rapid switching.

What switching topology benefits most from its characteristics?

High‑voltage N‑channel enhancement operation makes it appropriate for topologies that require 800V blocking with moderate continuous current handling.