onsemi NTP Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220
- RS-stocknr.:
- 214-8910
- Fabrikantnummer:
- NTP082N65S3HF
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 197,55
(excl. BTW)
€ 239,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 750 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 3,951 | € 197,55 |
| 100 - 100 | € 3,801 | € 190,05 |
| 150 + | € 3,749 | € 187,45 |
*prijsindicatie
- RS-stocknr.:
- 214-8910
- Fabrikantnummer:
- NTP082N65S3HF
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | NTP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 313W | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 15.75 mm | |
| Length | 10.53mm | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series NTP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 313W | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 15.75 mm | ||
Length 10.53mm | ||
Height 4.83mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET is brand−new high voltage super−junction MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Pb−Free
RoHS compliant
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