Infineon HEXFET Type N-Channel MOSFET, 340 A, 40 V Enhancement, 3-Pin TO-263 AUIRFS3004TRL

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 verpakking van 5 eenheden)*

€ 33,60

(excl. BTW)

€ 40,65

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 1.095 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
5 - 5€ 6,72€ 33,60
10 - 20€ 6,046€ 30,23
25 - 45€ 5,644€ 28,22
50 - 120€ 5,24€ 26,20
125 +€ 4,836€ 24,18

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
214-8955
Fabrikantnummer:
AUIRFS3004TRL
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

340A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.75mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

380W

Maximum Operating Temperature

175°C

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Automotive Qualified

Gerelateerde Links