Infineon HEXFET N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263 IRFS7537TRLPBF

RS-stocknr.:: 273-3030
Fabrikantnummer:: IRFS7537TRLPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263 IRFS7537TRLPBF

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 5 eenheden)*

€ 11,28

(excl. BTW)

€ 13,65

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 755 stuk(s) vanaf 02 november 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
5 - 20	€ 2,256	€ 11,28
25 - 45	€ 1,884	€ 9,42
50 - 95	€ 1,738	€ 8,69
100 - 245	€ 1,608	€ 8,04
250 +	€ 1,576	€ 7,88

*prijsindicatie

RS-stocknr.:: 273-3030
Fabrikantnummer:: IRFS7537TRLPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	173A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.30mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	230W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	142nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 173A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.30mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 230W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 142nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant

Datasheet - IRFS7537TRLPBF

Infineon HEXFET Series MOSFET, 60V Maximum Drain-Source Voltage, 173A Maximum Continuous Drain Current - IRFS7537TRLPBF

This MOSFET is a high-current N-channel enhancement device designed for surface-mount power switching in demanding electronic systems. It operates across a broad temperature range suitable for harsh environments and delivers substantial power handling for applications requiring efficient conduction and controlled gate-drive behaviour.

Features and Benefits:

• 230W power dissipation enables sustained high-load operation
• 3.30mΩ Rds(on) minimises conduction losses for efficiency
• 142nC gate charge supports predictable switching performance
• 20V gate voltage tolerance protects against overdrive transients
• 1.2V forward voltage reduces voltage drop in conduction paths

Applications

• Suitable for DC motor drives in industrial control systems
• Ideal for high-current power supplies and converters
• Used with automotive electronics requiring wide temperature range
• Can be used for switch-mode power stages in inverters
• Useful in thermally managed power distribution modules

What are the thermal operating limits for reliable use?

The device supports operation from -55°C up to 175°C.

How does the package type affect mounting and heat management?

The TO-263 surface-mount package permits low-profile PCB mounting and efficient heat transfer to copper planes.

What channel characteristics determine switching polarity?

It is an N-channel enhancement-mode transistor, requiring a positive gate drive to conduct.

What Peak continuous current capability can be expected in heavy-duty circuits?

The component is specified for continuous drain currents up to 173A.