Infineon OptiMOS Type N-Channel MOSFET, 50 A, 80 V Enhancement, 7-Pin MG-WDSON BSB104N08NP3GXUSA1
- RS-stocknr.:
- 214-8967
- Fabrikantnummer:
- BSB104N08NP3GXUSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 16,395
(excl. BTW)
€ 19,845
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 4.995 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 1,093 | € 16,40 |
| 75 - 135 | € 1,038 | € 15,57 |
| 150 - 360 | € 0,994 | € 14,91 |
| 375 - 735 | € 0,951 | € 14,27 |
| 750 + | € 0,885 | € 13,28 |
*prijsindicatie
- RS-stocknr.:
- 214-8967
- Fabrikantnummer:
- BSB104N08NP3GXUSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | MG-WDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 10.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35 mm | |
| Length | 5.05mm | |
| Height | 0.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type MG-WDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 10.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 6.35 mm | ||
Length 5.05mm | ||
Height 0.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range of OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These consists of range of energy efficient MOSFET transistors, in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.
Low parasitic inductance
Optimized technology for DC/DC converters
Dual sided cooling
Gerelateerde Links
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 7-Pin MG-WDSON
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 6-Pin MG-WDSON
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 6-Pin MG-WDSON BSF450NE7NH3XUMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 7-Pin WDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 7-Pin WDSON BSB028N06NN3GXUMA1
- Infineon HEXFET Type N-Channel MOSFET 80 V WDSON
- Infineon HEXFET Type N-Channel MOSFET 80 V WDSON IRF6646TRPBF
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220