Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON IRF6646TRPBF
- RS-stocknr.:
- 258-3963
- Fabrikantnummer:
- IRF6646TRPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,46
(excl. BTW)
€ 5,40
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,23 | € 4,46 |
| 20 - 48 | € 2,01 | € 4,02 |
| 50 - 98 | € 1,87 | € 3,74 |
| 100 - 198 | € 1,745 | € 3,49 |
| 200 + | € 1,63 | € 3,26 |
*prijsindicatie
- RS-stocknr.:
- 258-3963
- Fabrikantnummer:
- IRF6646TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | WDSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 89W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type WDSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 89W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.
Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Technique
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