Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252

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Subtotaal (1 rol van 2500 eenheden)*

€ 382,50

(excl. BTW)

€ 462,50

(incl. BTW)

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2500 +€ 0,153€ 382,50

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RS-stocknr.:
214-9046
Fabrikantnummer:
IPD70R1K4P7SAUMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS P7

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

22.7W

Typical Gate Charge Qg @ Vgs

4.7nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

6.73mm

Width

6.22 mm

Standards/Approvals

No

Height

2.41mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

It has Excellent thermal behaviour

Integrated ESD protection diode

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