Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252 IPD70R1K4P7SAUMA1
- RS-stocknr.:
- 214-9047
- Fabrikantnummer:
- IPD70R1K4P7SAUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 27,70
(excl. BTW)
€ 33,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 12.200 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,554 | € 27,70 |
| 100 - 200 | € 0,426 | € 21,30 |
| 250 - 450 | € 0,399 | € 19,95 |
| 500 - 1200 | € 0,371 | € 18,55 |
| 1250 + | € 0,343 | € 17,15 |
*prijsindicatie
- RS-stocknr.:
- 214-9047
- Fabrikantnummer:
- IPD70R1K4P7SAUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 22.7W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 22.7W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching Super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
It has Excellent thermal behaviour
Integrated ESD protection diode
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