Infineon OptiMOS Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin PQFN
- RS-stocknr.:
- 215-2472
- Fabrikantnummer:
- BSZ146N10LS5ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 2.225,00
(excl. BTW)
€ 2.690,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 26 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,445 | € 2.225,00 |
*prijsindicatie
- RS-stocknr.:
- 215-2472
- Fabrikantnummer:
- BSZ146N10LS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figures of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(the)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
Low R DS(on) in small package
Low gate charge
Lower output charge
Logic level compatibility
Gerelateerde Links
- Infineon OptiMOS™ N-Channel MOSFET 100 V, 8-Pin PQFN 3 x 3 BSZ146N10LS5ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 BSZ034N04LSATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S55R4ATMA1
- Infineon OptiMOS™ N-Channel MOSFET Transistor & Diode 40 V, 8-Pin PQFN 3 x 3 IPZ40N04S5L4R8ATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin PQFN 3 x 3 BSZ040N04LSGATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin PQFN 3 x 3 BSZ070N08LS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 80 V, 8-Pin PQFN 3 x 3 BSZ110N08NS5ATMA1
- Infineon OptiMOS™ 3 Silicon N-Channel MOSFET 100 V, 8-Pin PQFN 3 x 3 BSZ150N10LS3GATMA1
