Infineon CoolMOS C7 N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-220 IPA65R125C7XKSA1
- RS-stocknr.:
- 215-2482
- Fabrikantnummer:
- IPA65R125C7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 24,29
(excl. BTW)
€ 29,39
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending 320 stuk(s) vanaf 02 november 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 4,858 | € 24,29 |
| 10 - 20 | € 4,376 | € 21,88 |
| 25 - 45 | € 4,082 | € 20,41 |
| 50 - 120 | € 3,784 | € 18,92 |
| 125 + | € 3,548 | € 17,74 |
*prijsindicatie
- RS-stocknr.:
- 215-2482
- Fabrikantnummer:
- IPA65R125C7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 32W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 32W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon’s Cool MOS™ C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
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