Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-220 IPA65R125C7XKSA1
- RS-stocknr.:
- 215-2482
- Fabrikantnummer:
- IPA65R125C7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 22,06
(excl. BTW)
€ 26,695
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 345 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 4,412 | € 22,06 |
| 10 - 20 | € 3,972 | € 19,86 |
| 25 - 45 | € 3,706 | € 18,53 |
| 50 - 120 | € 3,44 | € 17,20 |
| 125 + | € 3,222 | € 16,11 |
*prijsindicatie
- RS-stocknr.:
- 215-2482
- Fabrikantnummer:
- IPA65R125C7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 32W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 32W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon’s Cool MOS™ C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Gerelateerde Links
- Infineon CoolMOS™ C7 N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA65R125C7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA65R225C7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA65R190C7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA65R045C7XKSA1
- Infineon CoolMOS™ N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA65R1K0CEXKSA1
- Infineon CoolMOS™ N-Channel MOSFET 650 V, 3-Pin TO-220 FP SPA20N60C3XKSA1
- Infineon CoolMOS™ N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPB60R040CFD7ATMA1
- Infineon CoolMOS™ N-Channel MOSFET 650 V, 3-Pin TO-220 FP IPA65R1K5CEXKSA1