Infineon CoolMOS C7 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 5-Pin VSON IPL65R130C7AUMA1
- RS-stocknr.:
- 214-9079
- Fabrikantnummer:
- IPL65R130C7AUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 20,39
(excl. BTW)
€ 24,67
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 4,078 | € 20,39 |
| 10 - 20 | € 3,632 | € 18,16 |
| 25 - 45 | € 3,386 | € 16,93 |
| 50 - 120 | € 3,142 | € 15,71 |
| 125 + | € 2,896 | € 14,48 |
*prijsindicatie
- RS-stocknr.:
- 214-9079
- Fabrikantnummer:
- IPL65R130C7AUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | VSON | |
| Series | CoolMOS C7 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 102W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.8V | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type VSON | ||
Series CoolMOS C7 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 102W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.8V | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 8.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
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