Infineon HEXFET Type N-Channel MOSFET, 8.7 A, 100 V Enhancement, 3-Pin TO-252

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 rol van 2000 eenheden)*

€ 384,00

(excl. BTW)

€ 464,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Laatste voorraad RS
  • Laatste 8.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks
Per stuk
Per rol*
2000 - 2000€ 0,192€ 384,00
4000 - 4000€ 0,182€ 364,00
6000 +€ 0,171€ 342,00

*prijsindicatie

RS-stocknr.:
215-2596
Fabrikantnummer:
IRFR120ZTRPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.7A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET® Power MOSFET series utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead free

Gerelateerde Links