Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 80 A, 30 V Enhancement, 8-Pin PDFN56 TSM055N03EPQ56
- RS-stocknr.:
- 216-9664
- Fabrikantnummer:
- TSM055N03EPQ56
- Fabrikant:
- Taiwan Semiconductor
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 29,45
(excl. BTW)
€ 35,625
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Wordt opgeheven
- Laatste 1.625 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 1,178 | € 29,45 |
| 50 - 75 | € 1,152 | € 28,80 |
| 100 - 225 | € 1,059 | € 26,48 |
| 250 - 975 | € 1,037 | € 25,93 |
| 1000 + | € 0,963 | € 24,08 |
*prijsindicatie
- RS-stocknr.:
- 216-9664
- Fabrikantnummer:
- TSM055N03EPQ56
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 5 mm | |
| Length | 6mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 5 mm | ||
Length 6mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Halogen-free according to IEC 61249-2-21
Gerelateerde Links
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM055N03EPQ56
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM055N03PQ56
- Taiwan Semi TSM025 Silicon MOSFET 80 V, 8-Pin PDFN56 TSM089N08LCR
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM080N03EPQ56
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM080N03PQ56
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM036N03PQ56
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM250NB06DCR
- Taiwan Semi TSM025 Silicon MOSFET 40 V, 8-Pin PDFN56 TSM033NB04CR