Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 44 A, 60 V Enhancement, 8-Pin PDFN56 TSM170N06PQ56
- RS-stocknr.:
- 216-9700
- Fabrikantnummer:
- TSM170N06PQ56
- Fabrikant:
- Taiwan Semiconductor
Subtotaal (1 verpakking van 25 eenheden)*
€ 17,05
(excl. BTW)
€ 20,625
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Wordt opgeheven
- Laatste 1.625 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 + | € 0,682 | € 17,05 |
*prijsindicatie
- RS-stocknr.:
- 216-9700
- Fabrikantnummer:
- TSM170N06PQ56
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 73.5W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 6.1mm | |
| Standards/Approvals | IEC, RoHS, WEEE | |
| Width | 5.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 73.5W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 6.1mm | ||
Standards/Approvals IEC, RoHS, WEEE | ||
Width 5.1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56
- Taiwan Semiconductor TSM025 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PDFN56