Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 104 A, 60 V Enhancement, 8-Pin PDFN56
- RS-stocknr.:
- 216-9658
- Fabrikantnummer:
- TSM045NB06CR
- Fabrikant:
- Taiwan Semiconductor
Momenteel niet beschikbaar
We weten niet of dit artikel weer voorradig zal zijn, het wordt door de fabrikant stopgezet.
- RS-stocknr.:
- 216-9658
- Fabrikantnummer:
- TSM045NB06CR
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 104nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 104nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Gerelateerde Links
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM045NB06CR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM130NB06LCR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM220NB06LCR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM130NB06CR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM280NB06LCR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM300NB06DCR
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM170N06PQ56
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM250NB06DCR