Taiwan Semiconductor TSM025 N-Channel MOSFET, 28 A, 60 V Enhancement, 8-Pin PDFN56 TSM280NB06LCR
- RS-stocknr.:
- 216-9709
- Fabrikantnummer:
- TSM280NB06LCR
- Fabrikant:
- Taiwan Semiconductor
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We weten niet of dit artikel weer voorradig zal zijn, het wordt door de fabrikant stopgezet.
- RS-stocknr.:
- 216-9709
- Fabrikantnummer:
- TSM280NB06LCR
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Series | TSM025 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 28 A | |
| Maximum Drain Source Voltage (Vds) | 60 V | |
| Channel Mode | Enhancement | |
| Pin Count | 8 | |
| Package Type | PDFN56 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.2 V | |
| Height | 1.1 mm | |
| Length | 6.1 mm | |
| Maximum Drain Source Resistance (Rds) | 28 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 56 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Typical Gate Charge (Qg) @ Vgs | 18 nC | |
| Width | 5.1 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Series TSM025 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 28 A | ||
Maximum Drain Source Voltage (Vds) 60 V | ||
Channel Mode Enhancement | ||
Pin Count 8 | ||
Package Type PDFN56 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.2 V | ||
Height 1.1 mm | ||
Length 6.1 mm | ||
Maximum Drain Source Resistance (Rds) 28 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 56 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Typical Gate Charge (Qg) @ Vgs 18 nC | ||
Width 5.1 mm | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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