Infineon CoolMOS Type N-Channel MOSFET, 7.2 A, 650 V N, 3-Pin TO-220
- RS-stocknr.:
- 217-2486
- Fabrikantnummer:
- IPA65R1K0CEXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 18,05
(excl. BTW)
€ 21,85
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 650 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,361 | € 18,05 |
| 100 - 200 | € 0,351 | € 17,55 |
| 250 - 450 | € 0,342 | € 17,10 |
| 500 - 1200 | € 0,333 | € 16,65 |
| 1250 + | € 0,325 | € 16,25 |
*prijsindicatie
- RS-stocknr.:
- 217-2486
- Fabrikantnummer:
- IPA65R1K0CEXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 68W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.65mm | |
| Width | 4.9 mm | |
| Standards/Approvals | No | |
| Height | 29.75mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 68W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.65mm | ||
Width 4.9 mm | ||
Standards/Approvals No | ||
Height 29.75mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Extremely low losses due to very low FOMRds on*Qg and Eoss
Very high commutation ruggedness
Easy-to-use/drive
Pb-free plating, Halogen free mold compound
Qualified for standard grade applications
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