Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-252 IPD65R1K0CEAUMA1

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€ 14,65

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€ 17,725

(incl. BTW)

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25 - 100€ 0,586€ 14,65
125 - 225€ 0,558€ 13,95
250 - 600€ 0,545€ 13,63
625 - 1225€ 0,51€ 12,75
1250 +€ 0,475€ 11,88

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Verpakkingsopties
RS-stocknr.:
214-9045
Fabrikantnummer:
IPD65R1K0CEAUMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15.3nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

6.73mm

Height

2.41mm

Standards/Approvals

No

Width

6.22 mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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