Infineon IPD N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1
- RS-stocknr.:
- 217-2536
- Fabrikantnummer:
- IPD95R450P7ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 18,04
(excl. BTW)
€ 21,83
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 1.600 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 1,804 | € 18,04 |
| 20 - 40 | € 1,714 | € 17,14 |
| 50 - 90 | € 1,679 | € 16,79 |
| 100 - 240 | € 1,57 | € 15,70 |
| 250 + | € 1,462 | € 14,62 |
*prijsindicatie
- RS-stocknr.:
- 217-2536
- Fabrikantnummer:
- IPD95R450P7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and CossBest-in-class DPAK RDS(on) of 450 mΩ
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
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