Infineon IPD N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

RS-stocknr.:: 217-2536
Fabrikantnummer:: IPD95R450P7ATMA1
Fabrikant:: Infineon

Infineon IPD N-Channel MOSFET, 14 A, 950 V Enhancement, 3-Pin TO-252 IPD95R450P7ATMA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 10 eenheden)*

€ 18,04

(excl. BTW)

€ 21,83

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

Plus verzending 1.590 stuk(s) vanaf 02 november 2026

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
10 - 10	€ 1,804	€ 18,04
20 - 40	€ 1,714	€ 17,14
50 - 90	€ 1,679	€ 16,79
100 - 240	€ 1,57	€ 15,70
250 +	€ 1,462	€ 14,62

*prijsindicatie

RS-stocknr.:: 217-2536
Fabrikantnummer:: IPD95R450P7ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	950V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	450mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	104W
	Typical Gate Charge Qg @ Vgs	35nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	900mV
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6.22mm
	Height	2.41mm
	Length	6.73mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 950V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 450mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 104W
	Typical Gate Charge Qg @ Vgs 35nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 900mV
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6.22mm
	Height 2.41mm
	Length 6.73mm
	Automotive Standard AEC-Q101

Datasheet - IPD95R450P7ATMA1

Infineon IPD Series MOSFET, 950V Drain Source Voltage, 14A Continuous Drain Current - IPD95R450P7ATMA1

This MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in demanding electrical systems. It operates across a wide temperature span for industrial and automotive contexts and is supplied in a surface-mount TO-252 package for Compact board-level integration.

Features and Benefits:

• 950 V drain-source rating enabling high-voltage switching capability
• 14 A continuous drain current for sustained load handling
• 104 W power dissipation to manage thermal stress under load
• 450 mΩ RDS(on) reducing conduction losses during operation
• 35 nC typical gate charge allowing predictable switching behaviour
• 20 V maximum gate-source voltage supporting robust gate drive

Applications

• Suitable for high-voltage power conversion stages
• Ideal for automotive power subsystems meeting AEC‑Q101 needs
• Used with switch-mode power supplies handling elevated voltages
• Can be used for industrial motor-drive interfaces
• Used for DC-DC converters requiring a surface-mount form factor

What temperature range can it reliably operate within?

It is rated for continuous use from −55 °C to 150 °C.

How many pins does the device present for PCB routing?

The component has three electrical connections for gate, drain and source.

What mounting method is required for assembly?

It is intended for surface mounting on appropriate solder pads.

What is the forward voltage of the intrinsic body diode?

The diode forward voltage is specified as 0.9 V.