Infineon CoolMOS CE Type N-Channel MOSFET, 2.6 A, 600 V Enhancement, 3-Pin TO-251

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 tube van 75 eenheden)*

€ 16,05

(excl. BTW)

€ 19,425

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 825 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per tube*
75 - 75€ 0,214€ 16,05
150 - 300€ 0,161€ 12,08
375 - 675€ 0,15€ 11,25
750 - 1800€ 0,139€ 10,43
1875 +€ 0,129€ 9,68

*prijsindicatie

RS-stocknr.:
217-2576
Fabrikantnummer:
IPS60R3K4CEAKMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2.6A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CE

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3.4Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

38W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

6.7nC

Maximum Operating Temperature

150°C

Height

9.82mm

Width

2.4 mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

Gerelateerde Links