Infineon CoolMOS CE Type N-Channel MOSFET, 8.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R950CEAKMA1
- RS-stocknr.:
- 214-9112
- Fabrikantnummer:
- IPSA70R950CEAKMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 13,70
(excl. BTW)
€ 16,575
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 100 | € 0,548 | € 13,70 |
| 125 - 225 | € 0,422 | € 10,55 |
| 250 - 600 | € 0,394 | € 9,85 |
| 625 - 1225 | € 0,367 | € 9,18 |
| 1250 + | € 0,339 | € 8,48 |
*prijsindicatie
- RS-stocknr.:
- 214-9112
- Fabrikantnummer:
- IPSA70R950CEAKMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Maximum Power Dissipation Pd | 94W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 6.1mm | |
| Width | 2.38mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Maximum Power Dissipation Pd 94W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 6.1mm | ||
Width 2.38mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Easy to use/drive
Very high commutation ruggedness
Qualified for standard grade applications
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- Infineon CoolMOS CE Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251