Infineon IAUA Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA200N04S5N010AUMA1
- RS-stocknr.:
- 218-2988
- Fabrikantnummer:
- IAUA200N04S5N010AUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,98
(excl. BTW)
€ 9,655
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.805 stuk(s) vanaf 16 februari 2026
- Plus verzending 2.000 stuk(s) vanaf 25 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,596 | € 7,98 |
| 50 - 120 | € 1,308 | € 6,54 |
| 125 - 245 | € 1,226 | € 6,13 |
| 250 - 495 | € 1,15 | € 5,75 |
| 500 + | € 1,07 | € 5,35 |
*prijsindicatie
- RS-stocknr.:
- 218-2988
- Fabrikantnummer:
- IAUA200N04S5N010AUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-HSOF-5 | |
| Series | IAUA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-HSOF-5 | ||
Series IAUA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-5 series N-channel power MOSFET. It is used for automotive applications.
N-channel - Enhancement mode - Normal Level
MSL3 up to 260°C peak reflow
175°C operating temperature
100% Avalanche tested
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