Infineon 600V CoolMOS CE N-Channel MOSFET, 6.8 A, 600 V N, 3-Pin TO-220 IPA60R1K0CEXKSA1
- RS-stocknr.:
- 218-3000
- Fabrikantnummer:
- IPA60R1K0CEXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 50 eenheden)*
€ 24,40
(excl. BTW)
€ 29,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 150 stuk(s) vanaf 09 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,488 | € 24,40 |
| 100 - 200 | € 0,38 | € 19,00 |
| 250 - 450 | € 0,356 | € 17,80 |
| 500 - 1200 | € 0,332 | € 16,60 |
| 1250 + | € 0,307 | € 15,35 |
*prijsindicatie
- RS-stocknr.:
- 218-3000
- Fabrikantnummer:
- IPA60R1K0CEXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 61W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 29.75mm | |
| Standards/Approvals | No | |
| Width | 4.9mm | |
| Height | 16.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 61W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 29.75mm | ||
Standards/Approvals No | ||
Width 4.9mm | ||
Height 16.15mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CE series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies . It is used in PFC stages, hard switching PWM stages and resonant switching stages, for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting.
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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