Infineon 700V CoolMOS P7 N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPA70R600P7SXKSA1

RS-stocknr.:: 218-3013
Fabrikantnummer:: IPA70R600P7SXKSA1
Fabrikant:: Infineon

Infineon 700V CoolMOS P7 N-Channel MOSFET, 8.5 A, 700 V N, 3-Pin TO-220 IPA70R600P7SXKSA1

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RS-stocknr.:: 218-3013
Fabrikantnummer:: IPA70R600P7SXKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8.5A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-220
	Series	700V CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	N
	Forward Voltage Vf	900mV
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	24.9W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8.5A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-220
	Series 700V CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode N
	Forward Voltage Vf 900mV
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 24.9W
	Maximum Operating Temperature +150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPA70R600P7SXKSA1

Infineon 700V CoolMOS P7 Series MOSFET, 700V Drain Source Voltage, 8.5A Continuous Drain Current - IPA70R600P7SXKSA1

This MOSFET is a high-voltage N-channel transistor designed for power switching in through-hole assemblies. It operates across a wide ambient range and is suited to applications requiring substantial voltage blocking and controlled gate drive while mounted in a TO-220 package.

Features and Benefits:

• 700V drain-source rating enables high-voltage switching capability
• 8.5A continuous drain current supports moderate current loads
• 600mΩ Rds(on) reduces conduction losses in switching cycles
• 0.9V forward voltage limits diode drop during commutation
• 24.9W power dissipation permits substantial thermal throughput
• 30V maximum gate-source voltage allows standard gate‑drive voltages

Applications

• Used for switching in high-voltage power supplies
• Suitable for industrial high-voltage converters and inverters
• Ideal for through‑hole prototypes requiring robust heat‑sinking
• Can be used for medium‑current telecom power stages
• Used with discrete gate‑drive circuits in lab test rigs

What operating temperatures can it withstand?

It functions across a thermal range from −40°C to +150°C.

How should it be mounted for optimal thermal performance?

The through‑hole TO-220 format is intended for bolt‑down heatsink mounting to maximise dissipation.

What gate‑drive constraints must be observed?

The gate‑source voltage must not exceed 30V to avoid gate damage.

What conduction and switching performance factors affect selection?

Conduction losses relate to the 600mΩ on‑resistance and switching behaviour is influenced by the 0.9V forward diode characteristic.

Is this device specified for automotive standard applications?

It is not designated to automotive standards and should be evaluated accordingly.