Infineon OptiMOS-TM3 Type N-Channel MOSFET, 45 A, 80 V N, 3-Pin TO-252 IPD135N08N3GATMA1
- RS-stocknr.:
- 218-3041
- Fabrikantnummer:
- IPD135N08N3GATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 19,28
(excl. BTW)
€ 23,32
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 8.200 stuk(s) vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,964 | € 19,28 |
| 100 - 180 | € 0,916 | € 18,32 |
| 200 - 480 | € 0,877 | € 17,54 |
| 500 - 980 | € 0,838 | € 16,76 |
| 1000 + | € 0,781 | € 15,62 |
*prijsindicatie
- RS-stocknr.:
- 218-3041
- Fabrikantnummer:
- IPD135N08N3GATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-252 | |
| Series | OptiMOS-TM3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-252 | ||
Series OptiMOS-TM3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ series N-channel power MOSFET. The OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
N-channel, normal level
100% avalanche tested
Pb-free plating
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