Infineon CoolMOS P6 Type N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 218-3088
- Fabrikantnummer:
- IPW60R280P6FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 43,92
(excl. BTW)
€ 53,13
(incl. BTW)
Voeg 60 eenheden toe voor gratis bezorging
Tijdelijk niet op voorraad
- Verzending vanaf 20 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 1,464 | € 43,92 |
| 60 - 120 | € 1,391 | € 41,73 |
| 150 - 270 | € 1,332 | € 39,96 |
| 300 - 570 | € 1,274 | € 38,22 |
| 600 + | € 1,186 | € 35,58 |
*prijsindicatie
- RS-stocknr.:
- 218-3088
- Fabrikantnummer:
- IPW60R280P6FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13.8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P6 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25.5nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13.8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P6 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25.5nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P6 series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. It is used in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.
Increased MOSFET dv/dt ruggedness
Very high commutation ruggedness
Easy to use/drive
Pb-free plating, Halogen free mold compound
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