Infineon CoolMOS P6 Type N-Channel MOSFET, 13.8 A, 600 V Enhancement, 3-Pin TO-247 IPW60R280P6FKSA1

Bekijk alle MOSFETs
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
Verpakkingsopties
RS-stocknr.:
218-3089
Fabrikantnummer:
IPW60R280P6FKSA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13.8A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

CoolMOS P6

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

25.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

21.1mm

Length

16.13mm

Width

5.21 mm

Automotive Standard

No

The Infineon 600V CoolMOS™ P6 series N-channel power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. It is used in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.

Increased MOSFET dv/dt ruggedness

Very high commutation ruggedness

Easy to use/drive

Pb-free plating, Halogen free mold compound

Gerelateerde Links