Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263 IRF3710STRLPBF
- RS-stocknr.:
- 218-3096
- Artikelnummer Distrelec:
- 304-39-414
- Fabrikantnummer:
- IRF3710STRLPBF
- Fabrikant:
- Infineon
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|---|---|---|
| 10 - 40 | € 1,836 | € 18,36 |
| 50 - 90 | € 1,745 | € 17,45 |
| 100 - 240 | € 1,67 | € 16,70 |
| 250 - 490 | € 1,597 | € 15,97 |
| 500 + | € 1,487 | € 14,87 |
*prijsindicatie
- RS-stocknr.:
- 218-3096
- Artikelnummer Distrelec:
- 304-39-414
- Fabrikantnummer:
- IRF3710STRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.8W | |
| Typical Gate Charge Qg @ Vgs | 86.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | EIA 418 | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.8W | ||
Typical Gate Charge Qg @ Vgs 86.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals EIA 418 | ||
Height 4.83mm | ||
Automotive Standard No | ||
The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free
Gerelateerde Links
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