STMicroelectronics SCTL90N N-Channel MOSFET, 40 A, 650 V, 5-Pin SCTL90N65G2V
- RS-stocknr.:
- 219-4226
- Fabrikantnummer:
- SCTL90N65G2V
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 219-4226
- Fabrikantnummer:
- SCTL90N65G2V
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Series | SCTL90N | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 40 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance (Rds) | 0.24 Ω | |
| Mount Type | Surface | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Series SCTL90N | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 40 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Pin Count 5 | ||
Maximum Drain Source Resistance (Rds) 0.24 Ω | ||
Mount Type Surface | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency
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