Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 55 V Enhancement, 3-Pin TO-252 AUIRFR48ZTRL
- RS-stocknr.:
- 220-7347
- Fabrikantnummer:
- AUIRFR48ZTRL
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 12,95
(excl. BTW)
€ 15,65
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 30 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,59 | € 12,95 |
| 25 - 45 | € 2,462 | € 12,31 |
| 50 - 120 | € 2,212 | € 11,06 |
| 125 - 245 | € 1,992 | € 9,96 |
| 250 + | € 1,896 | € 9,48 |
*prijsindicatie
- RS-stocknr.:
- 220-7347
- Fabrikantnummer:
- AUIRFR48ZTRL
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 91W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.22mm | |
| Width | 6.73 mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 91W | ||
Maximum Operating Temperature 175°C | ||
Length 6.22mm | ||
Width 6.73 mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRFR48ZTRL specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It is use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Gerelateerde Links
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK AUIRFR48ZTRL
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 55 V, 3-Pin DPAK IRFR1010ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR48ZTRLPBF
- Infineon HEXFET Dual Silicon P-Channel MOSFET 55 V, 3-Pin DPAK IRFR9024NTRLPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 75 V, 3-Pin D2PAK IRF3007STRLPBF
- Infineon HEXFET MOSFET 55 V DPAK IRLR3915TRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 40 V, 3-Pin DPAK IRFR3504ZTRPBF
- Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode 150 V, 3-Pin DPAK IRFR24N15DTRPBF
