Infineon HEXFET Type N-Channel MOSFET & Diode, 42 A, 55 V Enhancement, 3-Pin TO-252
- RS-stocknr.:
- 220-7489
- Fabrikantnummer:
- IRFR1010ZTRPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2000 eenheden)*
€ 1.102,00
(excl. BTW)
€ 1.334,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 0,551 | € 1.102,00 |
*prijsindicatie
- RS-stocknr.:
- 220-7489
- Fabrikantnummer:
- IRFR1010ZTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 460nC | |
| Maximum Power Dissipation Pd | 366W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 20.7mm | |
| Width | 5.31 mm | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 460nC | ||
Maximum Power Dissipation Pd 366W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 20.7mm | ||
Width 5.31 mm | ||
Length 15.87mm | ||
Automotive Standard No | ||
The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Normal level : Optimized for 10 V gate drive voltage
Industry standard surface-mount power package
Capable of being wave-soldered
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