Infineon OptiMOS N-Channel MOSFET & Diode, 40 A, 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1

RS-stocknr.:: 220-7362
Fabrikantnummer:: BSZ100N06NSATMA1
Fabrikant:: Infineon

Infineon OptiMOS N-Channel MOSFET & Diode, 40 A, 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 20 eenheden)*

€ 19,20

(excl. BTW)

€ 23,20

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 18 oktober 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per verpakking*
20 - 80	€ 0,96	€ 19,20
100 - 180	€ 0,911	€ 18,22
200 - 480	€ 0,874	€ 17,48
500 - 980	€ 0,835	€ 16,70
1000 +	€ 0,777	€ 15,54

*prijsindicatie

RS-stocknr.:: 220-7362
Fabrikantnummer:: BSZ100N06NSATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET & Diode
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TSDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	36W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Operating Temperature	150°C
	Height	1.2mm
	Standards/Approvals	No
	Width	6.1mm
	Length	5.35mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET & Diode
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 60V
	Package Type TSDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 36W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Operating Temperature 150°C
	Height 1.2mm
	Standards/Approvals No
	Width 6.1mm
	Length 5.35mm
	Automotive Standard No

Datasheet - BSZ100N06NSATMA1

Infineon OptiMOS Series MOSFET & Diode, 60V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ100N06NSATMA1

This MOSFET & diode component is a surface-mount N-channel enhancement device intended for power switching applications that require low conduction losses and integrated diode performance. It operates across a wide temperature span and is suitable for designs needing substantial continuous current handling while fitted in a Compact TSDSON package.

Features and Benefits:

• 60V drain-source rating enables medium-voltage switching applications
• 1mΩ maximum RDS(on) minimises conduction losses under load
• 40A continuous drain current supports high-current power stages
• 12nC typical gate charge allows controlled switching behaviour
• 36W maximum power dissipation sustains thermal load briefly
• 20V gate-source limit provides headroom for drive circuits

Applications

• Suitable for synchronous rectification in power converters
• Ideal for DC-DC converter output stage switching
• Used with motor-drive half-bridges requiring high current
• Can be used for battery management and load switching
• Used for point-of-load regulation in Compact systems

What temperature range can it tolerate in operation?

It is specified to operate from −55°C up to 150°C.

Which mounting method is required for assembly?

It is intended for surface mounting in a TSDSON package.

How many connection pins are available for PCB layout?

The device uses eight pins for electrical and mechanical connections.

What channel conduction mode does it employ?

It is an enhancement-mode N-channel device.