Infineon OptiMOS-TM3 Type N-Channel MOSFET, 63 A, 60 V Enhancement, 8-Pin TSDSON
- RS-stocknr.:
- 222-4628
- Fabrikantnummer:
- BSZ068N06NSATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 5000 eenheden)*
€ 1.745,00
(excl. BTW)
€ 2.110,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,349 | € 1.745,00 |
*prijsindicatie
- RS-stocknr.:
- 222-4628
- Fabrikantnummer:
- BSZ068N06NSATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSDSON | |
| Series | OptiMOS-TM3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSDSON | ||
Series OptiMOS-TM3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Length 5.35mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Pb-free lead plating; RoHS compliant
Superior thermal resistance 100% avalanche tested
Halogen-free according to IEC61249-2-23
Gerelateerde Links
- Infineon OptiMOS™ Silicon N-Channel MOSFET 60 V, 8-Pin TSDSON-8 FL BSZ068N06NSATMA1
- Infineon OptiMOS™ Silicon N-Channel MOSFET 40 V, 8-Pin TSDSON-8 FL BSZ028N04LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 40 V, 8-Pin TSDSON-8 FL BSZ025N04LSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 60 V, 8-Pin TSDSON-8 FL BSZ099N06LS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 25 V, 8-Pin TSDSON-8 FL BSZ014NE2LS5IFATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 30 V, 8-Pin TSDSON-8 FL BSZ0589NSATMA1
- Infineon OptiMOS™ N-Channel MOSFET 30 V, 8-Pin TSDSON BSZ0904NSIATMA1
- Infineon OptiMOS™ N-Channel MOSFET 25 V, 8-Pin TSDSON BSZ060NE2LSATMA1