Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2
- RS-stocknr.:
- 220-7416
- Fabrikantnummer:
- IPD90P03P4L04ATMA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 13,14
(excl. BTW)
€ 15,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 4.745 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,628 | € 13,14 |
| 50 - 120 | € 2,34 | € 11,70 |
| 125 - 245 | € 2,182 | € 10,91 |
| 250 - 495 | € 2,05 | € 10,25 |
| 500 + | € 1,894 | € 9,47 |
*prijsindicatie
- RS-stocknr.:
- 220-7416
- Fabrikantnummer:
- IPD90P03P4L04ATMA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 137W | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 137W | ||
Maximum Gate Source Voltage Vgs 5V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.
P-channel - Logic Level - Enhancement mode
No charge pump required for high side drive.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
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