Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2

RS-stocknr.:: 220-7415
Fabrikantnummer:: IPD90P03P4L04ATMA2
Fabrikant:: Infineon

Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2

Subtotaal (2500 eenheden, op een rol van 2500)*

€ 1.512,50

(excl. BTW)

€ 1.830,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Aantal stuks	Per stuk	Per rol*
2500 +	€ 0,605	€ 1.512,50

*prijsindicatie

RS-stocknr.:: 220-7415
Fabrikantnummer:: IPD90P03P4L04ATMA2
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type P
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.1mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	5V
	Forward Voltage Vf	-1.3V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	137W
	Typical Gate Charge Qg @ Vgs	125nC
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Length	6.73mm
	Width	6.22mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type MOSFET & Diode
	Channel Type Type P
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.1mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 5V
	Forward Voltage Vf -1.3V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 137W
	Typical Gate Charge Qg @ Vgs 125nC
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Length 6.73mm
	Width 6.22mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPD90P03P4L04ATMA2

Infineon OptiMOS Series MOSFET & Diode, 30V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD90P03P4L04ATMA2

This MOSFET & diode is a surface-mount power device designed for high-current switching in automotive and power-conversion environments. It integrates a body diode and operates as a P-channel enhancement-mode transistor, offering suitability for systems that require low on-resistance and robust thermal endurance across an extended temperature range.

Features and Benefits:

• 30V drain rating enables low-voltage power stage designs
• 4.1mΩ Rds(on) reduces conduction losses during heavy currents
• 90A continuous drain capability supports high-current applications
• 137W power dissipation allows sustained thermal loading
• 125nC typical gate charge ensures predictable switching behaviour

Applications

• Suitable for automotive DC-DC converter power stages
• Ideal for high-current synchronous rectification circuits
• Used with motor-drive low-voltage power rails
• Can be used for battery management and power distribution

What package and mounting style does it use?

It is supplied in a TO-252 package and is intended for surface mounting.

How does it perform across temperature extremes?

It is rated to operate from -55°C up to 175°C for wide temperature deployment.

What is the gate voltage limit and switching implication?

The maximum gate-source voltage is 5V which defines the allowed gate drive amplitude and influences switching margin.

What is the forward voltage characteristic of the integrated diode?

The body diode has a forward voltage of -1.3V as measured under specified conditions.