Infineon CoolMOS P7 N-Channel MOSFET & Diode, 16 A, 650 V Enhancement, 3-Pin SOT-223 IPN60R600P7SATMA1
- RS-stocknr.:
- 220-7437
- Fabrikantnummer:
- IPN60R600P7SATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 20 eenheden)*
€ 13,38
(excl. BTW)
€ 16,18
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 1.900 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,669 | € 13,38 |
| 100 - 180 | € 0,635 | € 12,70 |
| 200 - 480 | € 0,608 | € 12,16 |
| 500 - 980 | € 0,581 | € 11,62 |
| 1000 + | € 0,468 | € 9,36 |
*prijsindicatie
- RS-stocknr.:
- 220-7437
- Fabrikantnummer:
- IPN60R600P7SATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | SOT-223 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 7W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type SOT-223 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 7W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
The Infineon Cool MOS P7 super junction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes Cool MOS P7 in SOT-223 a perfect fit for its target applications. The 700V and 800V Cool MOS P7 are optimized for fly back topologies. 600V Cool MOS P7 SJ MOSFET is suitable for hard as well as so switching topologies (Fly back, PFC and LLC).
Ease of use and fast design-in through low ringing tendency and usage
across PFC and PWM stages
Simplified thermal management due to low switching and conduction
losses
Increased power density solutions enabled by using product swith
smaller foot print and higher manufacturing quality due to>2kVESD
protection
Suitable for awide variety of applications and power ranges
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