Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 75 V Enhancement, 3-Pin TO-263

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Subtotaal (1 rol van 800 eenheden)*

€ 616,00

(excl. BTW)

€ 744,00

(incl. BTW)

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  • Verzending vanaf 16 maart 2026
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RS-stocknr.:
220-7469
Fabrikantnummer:
IRF3007STRLPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

89nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

120W

Maximum Gate Source Voltage Vgs

20 V

Length

10.67mm

Standards/Approvals

No

Height

4.83mm

Width

9.65 mm

Automotive Standard

No

The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package

High-current carrying capability package (up to 195 A, die-size dependent)

Capable of being wave-soldered

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