Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 rol van 2000 eenheden)*

€ 1.070,00

(excl. BTW)

€ 1.294,00

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 10.000 stuk(s) vanaf 01 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
2000 - 2000€ 0,535€ 1.070,00
4000 +€ 0,522€ 1.044,00

*prijsindicatie

RS-stocknr.:
220-7493
Fabrikantnummer:
IRFR3504ZTRPBF
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

77A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

90W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

2.39 mm

Length

6.73mm

Height

6.22mm

Standards/Approvals

No

Automotive Standard

No

The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below <100kHz

Wide availability from distribution partners

Industry standard qualification level

Standard pinout allows for drop in replacement

High performance in low frequency applications

Gerelateerde Links