DiodesZetex 2N7002 Type N-Channel MOSFET, 292 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002EQ-7-F
- RS-stocknr.:
- 222-2694
- Fabrikantnummer:
- 2N7002EQ-7-F
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 1,95
(excl. BTW)
€ 2,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 3.450 stuk(s) vanaf 29 december 2025
- Plus verzending 1.850 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 0,039 | € 1,95 |
| 100 - 200 | € 0,038 | € 1,90 |
| 250 - 450 | € 0,037 | € 1,85 |
| 500 - 950 | € 0,036 | € 1,80 |
| 1000 + | € 0,035 | € 1,75 |
*prijsindicatie
- RS-stocknr.:
- 222-2694
- Fabrikantnummer:
- 2N7002EQ-7-F
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 292mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | 2N7002 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 0.7W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.1mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 292mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series 2N7002 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 0.7W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.1mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
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