DiodesZetex Dual DMN Type N-Channel MOSFET, 250 mA, 30 V Enhancement, 6-Pin SOT-363 DMN33D8LDWQ-7
- RS-stocknr.:
- 222-2840
- Fabrikantnummer:
- DMN33D8LDWQ-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 5,45
(excl. BTW)
€ 6,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.950 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,218 | € 5,45 |
| 50 - 75 | € 0,214 | € 5,35 |
| 100 - 225 | € 0,109 | € 2,73 |
| 250 - 975 | € 0,108 | € 2,70 |
| 1000 + | € 0,096 | € 2,40 |
*prijsindicatie
- RS-stocknr.:
- 222-2840
- Fabrikantnummer:
- DMN33D8LDWQ-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-363 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.55nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.35W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 2.15mm | |
| Width | 1.3 mm | |
| Height | 0.95mm | |
| Standards/Approvals | J-STD-020, MIL-STD-202, AEC-Q101, UL 94V-0, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-363 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.55nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.35W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 2.15mm | ||
Width 1.3 mm | ||
Height 0.95mm | ||
Standards/Approvals J-STD-020, MIL-STD-202, AEC-Q101, UL 94V-0, RoHS | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex Dual n-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected
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