DiodesZetex Dual DMT Type N-Channel MOSFET, 21.2 A, 40 V Enhancement, 8-Pin PowerDI3333-8 DMT4015LDV-7
- RS-stocknr.:
- 222-2875
- Fabrikantnummer:
- DMT4015LDV-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 15,30
(excl. BTW)
€ 18,525
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.800 stuk(s) vanaf 30 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,612 | € 15,30 |
| 50 - 75 | € 0,60 | € 15,00 |
| 100 - 225 | € 0,424 | € 10,60 |
| 250 - 975 | € 0,415 | € 10,38 |
| 1000 + | € 0,301 | € 7,53 |
*prijsindicatie
- RS-stocknr.:
- 222-2875
- Fabrikantnummer:
- DMT4015LDV-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI3333-8 | |
| Series | DMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 8.6nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI3333-8 | ||
Series DMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 8.6nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
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