DiodesZetex DMT N-Channel MOSFET, 75 A, 60 V Enhancement, 3-Pin TO-251 DMT69M5LH3
- RS-stocknr.:
- 222-2883
- Fabrikantnummer:
- DMT69M5LH3
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (25 eenheden, in een pakket van 25)*
€ 15,50
(excl. BTW)
€ 18,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 50 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,62 | € 15,50 |
| 50 - 75 | € 0,607 | € 15,18 |
| 100 - 475 | € 0,429 | € 10,73 |
| 500 - 975 | € 0,357 | € 8,93 |
| 1000 + | € 0,316 | € 7,90 |
*prijsindicatie
- RS-stocknr.:
- 222-2883
- Fabrikantnummer:
- DMT69M5LH3
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMT | |
| Package Type | TO-251 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 28.4nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Width | 2.3mm | |
| Height | 6.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMT | ||
Package Type TO-251 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 28.4nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Width 2.3mm | ||
Height 6.1mm | ||
Automotive Standard No | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low on-resistance
Low input capacitance
Small form factor thermally efficient package enables higher density end products
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